-
Application of Single Electron Tunneling:
Precision Capacitance Ratio Measurements, (80 kB)
Alan F. Clark, Neil M. Zimmerman, Edwin R. Williams, A. Amar, Dian Song,
F. C. Wellstood, C. J. Lobb, and R.J. Soulen, Jr.
Appl. Phys. Lett. 66, 2588 (1995).
-
Capacitors with Very Low Loss:
Cryogenic Vacuum-Gap Capacitors, (655 kB)
Neil M. Zimmerman,
IEEE Trans. Inst. Meas. 45, 841 (1996).
-
Accuracy of Electron Counting Using a
7-Junction Electron Pump, (120 kB)
Mark W. Keller, John M. Martinis, Neil M. Zimmerman, and Andrew H. Steinbach,
Appl. Phys. Lett. 69, 1804 (1996).
-
Recent Results and Future
Challenges for the NIST Charged-Capacitor Experiment,
(154 kB)
Neil M. Zimmerman, Jonathan L. Cobb, and Alan F. Clark,
IEEE Trans. Inst. Meas. 46, 294 (1997).
-
A Seven-Junction Electron Pump:
Design, Fabrication, and Operation, (77 kB)
Mark W. Keller, John M. Martinis, Andrew H. Steinbach, and Neil M. Zimmerman,
IEEE Trans. Inst. Meas. 46, 307 (1997).
-
Modulation of the charge of a single-electron
transistor by distant defects, (120 kB)
Neil M. Zimmerman, Jonathan L. Cobb, Alan F. Clark,
Phys. Rev. B 56 (1997-II)
-
A simple fabrication method for
nanometer-scale thin-metal stencils, (420 kB)
Neil M. Zimmerman,
J. Vac. Sci. Technol. B 15, 369 (1997).
-
A primer on electrical units in the
Systeme Internationale, (850 kB)
Neil M. Zimmerman,
Amer. J. Phys. 66, 324 (1998).
-
Dynamics of a Charged Fluctuator
in an Al-AlOx-Al single-electron transistor, (8 MB)
M. Kenyon, A. Amar, Dian Song, F. C. Wellstood, C. J. Lobb, Jonathan L. Cobb,
Neil M. Zimmerman,
J. Low Temp. Phys. 123(1/2), 103-126 (2001).
-
Behavior of a Charged Two-Level
Fluctuator in an Al-AlOx-Al single-electron transistor,
(350 kB)
M. Kenyon, Jonathan L. Cobb, A. Amar, Dian Song, F. C. Wellstood,
C. J. Lobb, Neil M. Zimmerman,
IEEE Trans. Appl. Supercond. 9, 4261 (1999).
-
A Capacitance Standard Based on Counting
Electrons, (350 kB)
Mark W. Keller, Ali L. Eichenberger, John M. Martinis, Neil M. Zimmerman,
Science 285, 1706 (1999).
-
Dynamic Input Capacitance of Single-Electron
Transistors and the Effect on Charge-Sensitive Electrometers,
(90 kB)
Neil M. Zimmerman and Mark W. Keller,
J. Appl. Phys. 87, 8570 (2000).
-
Frequency
Dependence of a Capacitance Standard Based on SET Devices,
(2 MB)
Ali L. Eichenberger, Mark W. Keller, John M. Martinis, Neil M. Zimmerman,
J. Low Temp. Phys. 118, 317 (2000).
-
Electrical Conductivity of Xenon at
Megabar Pressures,
(200 kB)
Mikhail I. Eremets, Eugene A. Gregoryanz, Victor V. Struzhkin, Ho-kwang
Mao, Russell J. Hemley, Norbert Mulders, Neil M. Zimmerman,
Phys. Rev. Lett. 85, 2797 (2000).
-
Excellent Charge Offset Stability
in a Si-Based Single-Electron Tunneling Transistor,
(80 kB)
Neil M. Zimmerman, William H. Huber, Akira Fujiwara, and Yasuo Takahashi,
Appl. Phys. Lett. 79, 3188 (2001).
-
Long-Term Charge Offset
Noise in Coulomb-Blockade Devices,
(1270 kB) ,
pdf
William H. Huber, Stuart B. Martin, Neil M. Zimmerman,
Experimental Implementation of Quantum Computation (IQC'01) 76
(Rinton Press, Princeton, NJ, 2001).
-
Electrical Metrology with Single
Electrons,
(300 kB)
Neil M. Zimmerman and Mark W. Keller,
Meas. Sci. Technol. 14, 1237–1242 (2003).
-
Larger Value and SI Measurement
of the Improved Cryogenic Capacitor for the Electron-Counting Capacitance
Standard,
(550 kB)
Neil M. Zimmerman, Mahmoud A. El Sabbagh, and Yicheng Wang,
IEEE Trans. Instrum. Meas. 52, 608-611 (2003).
-
Using a High-Value
Resistor in Triangle Comparisons of Electrical Standards,
(270 kB)
Randolph E. Elmquist, Neil M. Zimmerman, and William H. Huber,
IEEE Trans. Instrum. Meas. 52, 590-593 (2003).
-
Turnstile Operation Using a
Silicon Dual-Gate Single-Electron Transistor,
(310 kB)
Yukinori Ono, Neil M. Zimmerman, Kenji Yamazaki, and Yasuo Takahashi,
Jpn. J. Appl. Phys 42, L1109 - 11 (2003).
-
Current quantization due to
single-electron transfer in Si--wire charge-coupled Devices,
(300 kB)
Akira Fujiwara, Neil M. Zimmerman, Yukinori Ono, and Yasuo Takahashi,
Appl. Phys. Lett. 84, 1323 (2004).
-
Error Mechanisms and Rates in
Tunable-Barrier Single-Electron Turnstiles and CCD's,
(470 kB)
Neil M. Zimmerman, Emmanouel Hourdakis, Yukinori Ono, Akira Fujiwara, and
Yasuo Takahashi,
J. Appl. Phys 96, 5254 - 66 (2004).
-
Single electron tunnelling
transistor with tunable barriers using silicon nanowire MOSFET,
(1460 kB)
Akira Fujiwara, Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu,
Yasuo Takahashi, Neil M. Zimmerman, and Stuart B. Martin,
Appl. Phys. Lett. 88, 053121 (2006).
-
Electrostatically-Gated Si
Devices: Coulomb Blockade and Barrier Capacitance,
(1300 kB)
Neil M. Zimmerman, Akira Fujiwara, Hiroshi Inokawa, and Yasuo Takahashi,
Appl. Phys. Lett 89, 052102 (2006).
-
Sub-micron gap capacitor for
measurement of breakdown voltage in air,
(455 kB)
Emmanouel Hourdakis, Brian J. Simonds, and Neil M. Zimmerman,
Rev. Sci. Instr. 77, 034702 (2006).
-
An Upper Bound to the
Frequency Dependence of the Cryogenic Vacuum-Gap Capacitor,
(276 kB)
Neil M. Zimmerman, Brian J. Simonds, and Yicheng Wang,
Metrologia 43, 383 (2006).
-
Electrical breakdown
in the microscale: Testing the standard theory,
(430 kB)
Emmanouel Hourdakis, Garnett W. Bryant, and Neil M. Zimmerman,
J. Appl.. Phys. 100, 123306 (2006).
-
Charge offset stability in
tunable-barrier Si single-electron tunneling devices,
(210 kB)
Neil M. Zimmerman, Brian J. Simonds, Akira Fujiwara, Yukinori Ono,
Yasuo Takahashi, and Hiroshi Inokawa,
Appl. Phys. Lett 90, 033507 (2007).
-
Uncertainty budget for the NIST electron
counting capacitance standard, ECCS-1
,
(220 kB)
Mark W. Keller, Neil M. Zimmerman, and Ali L. Eichenberger,
Metrologia 44, 505-512 (2007).
-
Lack of charge offset drift is a robust property of Si single
electron transistors
,
(360 kB)
Emmanouel Hourdakis, Jeremy A. Wahl, and Neil M. Zimmerman,
Appl. Phys. Lett. 92, 062102 (2008).
-
Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors
,
(200 kB)
Oana D. Jurchescu, Behrang H. Hamadani, Hao D. Xiong, Sungkyu K. Park,
Sankar Subramanian, Neil M. Zimmerman, John E. Anthony, Thomas N. Jackson, and
David J. Gundlach,
Appl. Phys. Lett. 92, 132103 (2008).
-
Why the long-term charge offset drift in Si single-electron
tunneling transistors is much smaller (better) than in metal-based
ones: Two-level fluctuator stability
,
(1700 kB)
Neil M. Zimmerman, William H. Huber, Brian Simonds, Emmanouel Hourdakis,
Akira Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa,
Miha Furlan, and Mark W. Keller,
Appl. Phys. Lett. 104, 033710 (2008).
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