Ionizing
Setup Characteristics
| NG-7 (Ni coated) | ||
| Perfect Crystal Silicon | ||
| ~ 90% (2.71 Å) | ||
| ± 0.25°/day (ideal condition) | ||
| PG (002), parallel double crystal | ||
| 2.0 Å to 4.75 Å | ||
| 2 · 105 n/(cm2 · s) (at the interferometer) | ||
| 2 mm × 8 mm (nominal) | ||
| 3He (black) and CCD type PSD | ||
| ~ 210 n/(cm2 ·  s) (O+H beams) | ||
| < 10-7 g | ||
| < 1 µm (linear), < 0.1 µrad (rotation) | ||
| ± 0.1° C variation/day (nominal) | ||
| Super mirror transmission type | ||
| > 98% (4 Å) |
Pages designed and maintained by the
Office of ECSED.
Inquiries or comments:
david.gilliam@nist.gov.
Online: November 1998