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  6.

Radiation damage by a 157 nanometer excimer laser. The graph displays the relative responsivity measured at 157 nanometers of each photodiode versus radiation dose from an excimer laser operating at 157 nanometers. The radiation dose was varied by changing the number of excimer laser pulses incident on the diodes. The responsivity was measured using SURF III.

The gallium phosphide, gallium arsenic phosphide, and platinum silicide photodiodes exhibited only minor decrease in responsivity until doses exceeded 100 joules per square centimeter. In contrast, the diamond, nitrided silicon, thin-nitrided silicon, and UV silicon diodes exhibited varying amounts of decreased responsivity at doses as low as 100 millijoules per square centimeter. Disclaimer: These results may not be indicative of other photodiodes of the same materials.

 

  8.

Reflectance versus wavelength of a gold mirror for the s and p polarized infrared light between 1.5 micrometers to 5 micrometers is shown to be almost same around 0.97 and 0.98 for the angle of incidence of 12 degrees. As the angle of incidence increases the reflectance values for the s and p polarized light widely differ. For example, at 78 degrees of angle of incidence the reflectance of the s polarized light is close to unity whereas for the p polarized light it is between 0.89 and 0.90.

 

  9.

The transmittance for the Standard reference materials 2053, 2054 and 2055 are shown as optical densities 1, 2, and 3, respectively for 2 micrometers to 25 micrometers. The transmittance for SRM 2056 slightly varies with wavelength. The optical density is nominally 4, but it falls slowly to 4.5 at wavelength 7 micrometers and rises close to 4 by 25 micrometers.