Here is the electron-impact ionization cross section for Silicon monofluoride (SiF) from 5 eV to 1000 eV.

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T=5 to 1000 eV T=5 to 100 eV T=50 to 250 eV T=250 to 1000 eV

Legend (below)

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Data set	Source
	BEB W. Hwang, Y.-K. Kim and M.E. Rudd, J. Chem. Phys. 104, 2956 (1996).
	Additivity; H. Deutsch, C. Cornelissen, L. Cespiva, V. Bonacic-Koutecky, D. Margreiter and T. D. Märk, Int. J. Mass Spectrom. Ion Processes 129, 43 (1993), and references therein.
	T. R. Hayes, R. C. Wetzel, F. A. Baiocchi and R. S. Freund, J. Chem. Phys. 88, 823 (1988).

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