Here is the electron-impact ionization cross section for Silicon monofluoride (SiF) from 5 eV to 1000 eV.

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T=5 to 1000 eV T=5 to 100 eV T=50 to 250 eV T=250 to 1000 eV

Legend (below)

Data setSource
W. Hwang, Y.-K. Kim and M.E. Rudd, J. Chem. Phys. 104, 2956 (1996).
Theory #1Additivity; H. Deutsch, C. Cornelissen, L. Cespiva, V. Bonacic-Koutecky, D. Margreiter and T. D. Märk, Int. J. Mass Spectrom. Ion Processes 129, 43 (1993), and references therein.
Experiment #1T. R. Hayes, R. C. Wetzel, F. A. Baiocchi and R. S. Freund, J. Chem. Phys. 88, 823 (1988).

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