Here is the electron-impact ionization cross section for Silane (SiH₄) from 5 eV to 1000 eV.

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T=5 to 1000 eV T=5 to 100 eV T=50 to 250 eV T=250 to 1000 eV

Legend (below)

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Data set	Source
	BEB (adiabatic IP) M. A. Ali, Y.-K. Kim, W. Hwang, N.M. Weinberger, and M.E. Rudd, J. Chem. Phys. 106, 9602 (1997).
	BEB (vertical IP) M. A. Ali, Y.-K. Kim, W. Hwang, N.M. Weinberger, and M.E. Rudd, J. Chem. Phys. 106, 9602 (1997).
	E. Krishnakumar and S. K. Srivastava, Contrib. Plasma Phys. 35, 395 (1995).
	H. Chatham, D. Hills, R. Robertson and A. Gallagher, J. Chem. Phys. 81, 1770 (1984).
	R. Basner, M. Schmidt, V. Tarnovsky and K. Becker, Int. J. Mass Spectrom. Ion Processes, in print (1997).

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