Here is the electron-impact ionization cross section for Tetramethylsilane (Si(CH₃)₄) from 5 eV to 1000 eV.

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T=5 to 1000 eV T=5 to 100 eV T=50 to 250 eV T=250 to 1000 eV

Legend (below)

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Data set	Source
	BEB M. A. Ali, Y.-K. Kim, W. Hwang, N.M. Weinberger, and M.E. Rudd, J. Chem. Phys. 106, 9602 (1997).
	S. McGinnis, K. Riehl and P. D. Haaland, Chem. Phys. Lett. 232, 99 (1995) (experiment).
	R. Basner, R. Foest, M. Schmidt, F. Sigeneger, P. Kurunczi, K. Becker and H. Deutsch, Int. J. Mass. Spectrom. Ion Processes 153, 65 (1996).

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