Here is the electron-impact ionization cross section for Tetramethylsilane (Si(CH3)4) from 5 eV to 1000 eV.

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T=5 to 1000 eV T=5 to 100 eV T=50 to 250 eV T=250 to 1000 eV

Legend (below)

Data setSource
M. A. Ali, Y.-K. Kim, W. Hwang, N.M. Weinberger, and M.E. Rudd, J. Chem. Phys. 106, 9602 (1997).
Theory #1S. McGinnis, K. Riehl and P. D. Haaland, Chem. Phys. Lett. 232, 99 (1995) (experiment).
Experiment #1R. Basner, R. Foest, M. Schmidt, F. Sigeneger, P. Kurunczi, K. Becker and H. Deutsch, Int. J. Mass. Spectrom. Ion Processes 153, 65 (1996).

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